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單晶CVD薄膜和熔化成長法製程中之不穩定熱流與使其穩定之研究---子計畫四:垂直布氏爐單晶熔化成長製程中的流體運動及熱傳之數值研究(I)

dc.contributor.author曲新生en_US
dc.contributor.authorCHU, HSIN-SENen_US
dc.contributor.department國立交通大學機械工程研究所zh_TW
dc.date.accessioned2014-12-13T10:38:51Z
dc.date.available2014-12-13T10:38:51Z
dc.date.issued1996en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.identifier.govdocNSC85-2212-E009-033zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=230697&docId=41962en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/95783
dc.language.isozh_TWen_US
dc.subject單晶成長zh_TW
dc.subject布氏爐zh_TW
dc.subject雙重擴散zh_TW
dc.subject熱傳遞zh_TW
dc.subject質量傳遞zh_TW
dc.subjectCrystal growthen_US
dc.subjectVertical bridgmanen_US
dc.subjectDouble diffusionen_US
dc.subjectHeat transferen_US
dc.subjectMasstransferen_US
dc.title單晶CVD薄膜和熔化成長法製程中之不穩定熱流與使其穩定之研究---子計畫四:垂直布氏爐單晶熔化成長製程中的流體運動及熱傳之數值研究(I)zh_TW
dc.titleInvestigation of Flow Field and Heat Transfer during Crystal Growth in Vertical Bridgman Configuration by Numerical Simulation(I)en_US
dc.typePlanen_US

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