Optimization of the absorber layer for a-Si:H and a-Si1-xGex:H single-junction solar cells
| dc.citation.issue | 10 | en_US |
| dc.citation.volume | 8 | en_US |
| dc.contributor.author | Tsai, C. C. | en_US |
| dc.contributor.author | Hsu, C. H. | en_US |
| dc.contributor.author | Hsu, H. J. | en_US |
| dc.contributor.author | Cheng, P. H. | en_US |
| dc.contributor.author | Wang, C. M. | en_US |
| dc.contributor.author | Huang, Y. T. | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:22:14Z | |
| dc.date.available | 2014-12-08T15:22:14Z | |
| dc.date.issued | 2011 | en_US |
| dc.description.abstract | This paper focuses on the optimization of the absorber layers in single-junction a-Si:H and a-Si1-xGex:H solar cells. For a-Si:H thin-film solar cells, we have found the electrode-to-substrate (E/S) spacing is an important parameter. By optimizing the E/S spacing, the cell effi-ciency was improved from 7.62% to 8.70% due to an improvement in material quality and JSC. For a-Si1-xGex:H solar cells, by optimizing the Ge-content, the microstructure parameter and the graded bandgap, we were able to improve the cell efficiency to 8.15%. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | en_US |
| dc.identifier.doi | 10.1002/pssc.201001229 | en_US |
| dc.identifier.issn | 1862-6351 | en_US |
| dc.identifier.journal | PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 10 | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1002/pssc.201001229 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/15748 | |
| dc.identifier.wosnumber | WOS:000301591500005 | |
| dc.language.iso | en_US | en_US |
| dc.subject | photovoltaics | en_US |
| dc.subject | thin film solar cells | en_US |
| dc.subject | a-Si:H | en_US |
| dc.subject | amorphous Si-Ge alloy | en_US |
| dc.title | Optimization of the absorber layer for a-Si:H and a-Si1-xGex:H single-junction solar cells | en_US |
| dc.type | Proceedings Paper | en_US |