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A 3T1R Nonvolatile TCAM Using MLC ReRAM with Sub-1ns Search Time

dc.citation.epageU449en_US
dc.citation.spage318en_US
dc.citation.volume58en_US
dc.citation.woscount0en_US
dc.contributor.authorChang, Meng-Fanen_US
dc.contributor.authorLin, Chien-Chenen_US
dc.contributor.authorLee, Alberten_US
dc.contributor.authorKuo, Chia-Chenen_US
dc.contributor.authorYang, Geng-Hauen_US
dc.contributor.authorTsai, Hsiang-Jenen_US
dc.contributor.authorChen, Tien-Fuen_US
dc.contributor.authorSheu, Shyh-Shyuanen_US
dc.contributor.authorTseng, Pei-Lingen_US
dc.contributor.authorLee, Heng-Yuanen_US
dc.contributor.authorKu, Tzu-Kunen_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.date.accessioned2015-07-21T08:31:23Z
dc.date.available2015-07-21T08:31:23Z
dc.date.issued2015-01-01en_US
dc.description.abstracten_US
dc.identifier.isbn978-1-4799-6224-2en_US
dc.identifier.issn0193-6530en_US
dc.identifier.journal2015 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE DIGEST OF TECHNICAL PAPERS (ISSCC)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/125136
dc.identifier.wosnumberWOS:000355252700133en_US
dc.language.isoen_USen_US
dc.titleA 3T1R Nonvolatile TCAM Using MLC ReRAM with Sub-1ns Search Timeen_US
dc.typeProceedings Paperen_US

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