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Microcrystallinity of undoped amorphous silicon films and its effects on the transfer characteristics of thin film transistors

dc.citation.woscount0en_US
dc.contributor.authorLiang, CWen_US
dc.contributor.authorChiang, WCen_US
dc.contributor.authorFeng, MSen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2019-04-02T06:04:36Z
dc.date.available2019-04-02T06:04:36Z
dc.date.issued1995-01-01en_US
dc.identifier.journalPROCEEDINGS OF THE FOURTH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGYen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/151142
dc.identifier.wosnumberWOS:A1995BF21N00076en_US
dc.language.isoen_USen_US
dc.titleMicrocrystallinity of undoped amorphous silicon films and its effects on the transfer characteristics of thin film transistorsen_US
dc.typeProceedings Paperen_US

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