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Characterization of a Sub-THz Photonic Transmitter Based on a Sep arated-Tran sp o rt-Recombin ation Photodiode

dc.citation.epage+en_US
dc.citation.spage285en_US
dc.citation.woscount0en_US
dc.contributor.authorShi, J. -W.en_US
dc.contributor.authorLi, Yu-Taien_US
dc.contributor.authorPan, Ci-Lingen_US
dc.contributor.authorChiu, C. -H.en_US
dc.contributor.authorLiu, W. -S.en_US
dc.contributor.authorChyi, J. -I.en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2017-04-21T06:49:11Z
dc.date.available2017-04-21T06:49:11Z
dc.date.issued2007en_US
dc.description.abstractBy incorporating low-temperature-grown GaAs based separated-transport-recombination photodiode with micromachined antenna, such photonic-transmitter can radiate strong sub-THz waves at designed frequency (similar to 500GHz) without using Si-lens. Problems of device saturation under high bias voltage were also eliminated. (C) 2005 Optical Society of Americaen_US
dc.identifier.isbn978-1-4244-3590-6en_US
dc.identifier.journal2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/135119
dc.identifier.wosnumberWOS:000268751000144en_US
dc.language.isoen_USen_US
dc.titleCharacterization of a Sub-THz Photonic Transmitter Based on a Sep arated-Tran sp o rt-Recombin ation Photodiodeen_US
dc.typeProceedings Paperen_US

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