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具有新式副閘極結構的低溫複晶矽薄膜電晶體的製作與分析

dc.contributor.author黃調元en_US
dc.contributor.authorTIAO-YUANHUANGen_US
dc.contributor.department國立交通大學電子工程學系zh_TW
dc.date.accessioned2014-12-13T10:36:19Z
dc.date.available2014-12-13T10:36:19Z
dc.date.issued2000en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.identifier.govdocNSC89-2215-E009-104zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=583890&docId=109707en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/93860
dc.language.isozh_TWen_US
dc.title具有新式副閘極結構的低溫複晶矽薄膜電晶體的製作與分析zh_TW
dc.titleFabrication and Characterization of Low-Temperature Polysilicon Thin Film Transistors with Novel Self-Aligned Sub-Gate Structuresen_US
dc.typePlanen_US

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