Re-examination the Effects of Selenium Segregation on the Schottky Barrier Height Reduction of the NiGe/Ge Contact
| dc.citation.epage | 109 | en_US |
| dc.citation.spage | 108 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Chen, Yi-Ju | en_US |
| dc.contributor.author | Chou, Hung-Ju | en_US |
| dc.contributor.author | Li, Ching-I | en_US |
| dc.contributor.author | Tsui, Bing-Yue | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2017-04-21T06:48:46Z | |
| dc.date.available | 2017-04-21T06:48:46Z | |
| dc.date.issued | 2016 | en_US |
| dc.description.abstract | Effect of selenium segregation on the Schottky barrier height of the NiGe/Ge interface is examined. By carefully designed experiments, ion implantation damages in Ge can be avoided so that the pure effect of Se segregation can be examined. The best result achieved in this work is 0.1 eV barrier height reduction. A 10 times contact resistivity reduction is expected. | en_US |
| dc.identifier.isbn | 978-1-5090-0726-4 | en_US |
| dc.identifier.journal | 2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/134678 | |
| dc.identifier.wosnumber | WOS:000391250500045 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Re-examination the Effects of Selenium Segregation on the Schottky Barrier Height Reduction of the NiGe/Ge Contact | en_US |
| dc.type | Proceedings Paper | en_US |
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