A computational efficient method for HBT intermodulation distortions and two-tone characteristics simulation
| dc.citation.epage | 229 | en_US |
| dc.citation.spage | 226 | en_US |
| dc.contributor.author | Huang, KY | en_US |
| dc.contributor.author | Li, YM | en_US |
| dc.contributor.author | Lee, CP | en_US |
| dc.contributor.author | Sze, SM | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:26:53Z | |
| dc.date.available | 2014-12-08T15:26:53Z | |
| dc.date.issued | 2001 | en_US |
| dc.description.abstract | In this paper, a new simulation method for two-tone characteristics calculations and the third-order intercept point (OIP3) of heterojunction bipolar transistor (HBT) in large-scale time domain is proposed. Base on waveform relaxation (WR) and monotone iterative (MI) methods, we solve a set of nonlinear ordinary differential equation (ODE) of equivalent circuit. With this approach, the two-tone characteristics in frequency domain for HBTs were directly computed from time domain result with fast Fourier transform (FFT). Simulation results on a realistic HBT are presented to show the accuracy and efficiency of the method. | en_US |
| dc.identifier.isbn | 3-211-83708-6 | en_US |
| dc.identifier.journal | SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2001 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/19123 | |
| dc.identifier.wosnumber | WOS:000172900500049 | |
| dc.language.iso | en_US | en_US |
| dc.title | A computational efficient method for HBT intermodulation distortions and two-tone characteristics simulation | en_US |
| dc.type | Proceedings Paper | en_US |
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