Non-polar plane of wurtzite structure material
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20130240876 | zh_TW |
| dc.contributor.author | CHANG Li | en_US |
| dc.contributor.author | HO Yen-Teng | en_US |
| dc.date.accessioned | 2014-12-16T06:14:55Z | |
| dc.date.available | 2014-12-16T06:14:55Z | |
| dc.date.issued | 2013-09-19 | en_US |
| dc.description.abstract | The present invention relates to a method for growing a novel non-polar (13 40) plane epitaxy layer of wurtzite structure, which comprises the following steps: providing a single crystal oxide with perovskite structure; using a plane of the single crystal oxide as a substrate; and forming a non-polar (13 40) plane epitaxy layer of wurtzite semiconductors on the plane of the single crystal oxide by a vapor deposition process. The present invention also provides an epitaxy layer having non-polar (13 40) plane obtained according to the aforementioned method. | zh_TW |
| dc.identifier.govdoc | C30B023/02 | zh_TW |
| dc.identifier.govdoc | C30B025/06 | zh_TW |
| dc.identifier.govdoc | C30B023/08 | zh_TW |
| dc.identifier.govdoc | C30B025/18 | zh_TW |
| dc.identifier.govdoc | H01L029/04 | zh_TW |
| dc.identifier.govdoc | C30B023/06 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/104998 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | Non-polar plane of wurtzite structure material | zh_TW |
| dc.type | Patents | en_US |