PHOTO TRANSISTOR
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20120018719 | zh_TW |
| dc.contributor.author | ZAN HSIAO-WEN | en_US |
| dc.contributor.author | MENG HSIN-FEI | en_US |
| dc.contributor.author | TSAI CHUANG-CHUANG | en_US |
| dc.contributor.author | CHEN WEI-TSUNG | en_US |
| dc.contributor.author | CHAO YU-CHIANG | en_US |
| dc.date.accessioned | 2014-12-16T06:15:18Z | |
| dc.date.available | 2014-12-16T06:15:18Z | |
| dc.date.issued | 2012-01-26 | en_US |
| dc.description.abstract | A phototransistor includes a substrate, a gate layer, a dielectric layer, an active layer, a source and a drain, and a light absorption layer. The gate layer is disposed on a top of the substrate, and the dielectric layer is disposed on a top of the gate layer. The active layer has a first bandgap and is disposed on a top of the dielectric layer, and the source and the drain are disposed on a top of the active layer. The light absorption layer has a second bandgap and is capped on the active layer, and the second bandgap is smaller than the first bandgap. | zh_TW |
| dc.identifier.govdoc | H01L029/12 | zh_TW |
| dc.identifier.govdoc | H01L031/113 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/105222 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | PHOTO TRANSISTOR | zh_TW |
| dc.type | Patents | en_US |