Physics and modeling of Ge-on-Insulator MOSFETs
| dc.citation.epage | 288 | en_US |
| dc.citation.spage | 285 | en_US |
| dc.contributor.author | Chin, A | en_US |
| dc.contributor.author | Kao, HL | en_US |
| dc.contributor.author | Tseng, YY | en_US |
| dc.contributor.author | Yu, DS | en_US |
| dc.contributor.author | Chen, CC | en_US |
| dc.contributor.author | McAlister, SP | en_US |
| dc.contributor.author | Chi, CC | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.date.accessioned | 2014-12-08T15:25:15Z | |
| dc.date.available | 2014-12-08T15:25:15Z | |
| dc.date.issued | 2005 | en_US |
| dc.description.abstract | We have used process and device simulation tools (T-Supreme and Medici) to analyze the measured DC characteristics of Ge-on-Insulator (GOI) MOSFETs. The GOI devices have higher drive current than do their Si counterparts, due to the smaller effective mass (m) and smaller Ge energy bandgap - however this also causes a larger off-state I(ds) leakage current. The simulations predict that the GOI MOSFETs have better RF gain and noise performance compared with Si devices. This is important for high speed operation as down-scaling continues. | en_US |
| dc.identifier.doi | 10.1109/ESSDER.2005.1546641 | en_US |
| dc.identifier.isbn | 0-7803-9203-5 | en_US |
| dc.identifier.issn | 1930-8876 | en_US |
| dc.identifier.journal | PROCEEDINGS OF ESSDERC 2005: 35TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/ESSDER.2005.1546641 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/17622 | |
| dc.identifier.wosnumber | WOS:000236176200064 | |
| dc.language.iso | en_US | en_US |
| dc.title | Physics and modeling of Ge-on-Insulator MOSFETs | en_US |
| dc.type | Proceedings Paper | en_US |