極平整之超薄氧化層
| dc.contributor.author | 蔡中 | en_US |
| dc.contributor.department | 交通大學電子工程系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:37:13Z | |
| dc.date.available | 2014-12-13T10:37:13Z | |
| dc.date.issued | 1999 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC88-2215-E009-033 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=444364&docId=80480 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/94456 | |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 超薄 | zh_TW |
| dc.subject | 氧化層 | zh_TW |
| dc.subject | 二氧化矽 | zh_TW |
| dc.subject | 半導體 | zh_TW |
| dc.subject | 閘極氧化層 | zh_TW |
| dc.subject | Ultrathin | en_US |
| dc.subject | Oxidation layer | en_US |
| dc.subject | SiO2 | en_US |
| dc.subject | Semiconductor | en_US |
| dc.subject | Gate oxide | en_US |
| dc.title | 極平整之超薄氧化層 | zh_TW |
| dc.title | Atomically Smooth Ultrathin Oxide | en_US |
| dc.type | Plan | en_US |