矽鍺源/汲極金氧半電晶體及電感在射頻應用之研究(III)

dc.contributor.author	張俊彥	en_US
dc.contributor.author	CHANG CHUN-YEN	en_US
dc.contributor.department	國立交通大學電子工程研究所	zh_TW
dc.date.accessioned	2014-12-13T10:39:28Z
dc.date.available	2014-12-13T10:39:28Z
dc.date.issued	2001	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.identifier.govdoc	NSC90-2215-E009-112	zh_TW
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=665829&docId=126406	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/96520
dc.language.iso	zh_TW	en_US
dc.subject	矽鍺源	zh_TW
dc.subject	汲極	zh_TW
dc.subject	金氧半導體場效電晶體	zh_TW
dc.subject	射頻應用	zh_TW
dc.subject	SiGe source	en_US
dc.subject	Drain	en_US
dc.subject	MOSFET	en_US
dc.subject	RF application	en_US
dc.title	矽鍺源/汲極金氧半電晶體及電感在射頻應用之研究(III)	zh_TW
dc.title	A Study on SiGe Source/Drain MOSFET and Inductor for RF Applications (III)	en_US
dc.type	Plan	en_US

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