A high power enhancement-mode pseudomorphic high electron mobility transistor with 2.5 W output power and 64.5 % efficiency at 3 V

Abstract

A 3-V operated enhancement-mode pseudomorphic high electron mobility transistor (E-PHEMT) with high output power and high efficiency has been developed. The E-PHEMT has total gate width of 20 mm and gate length. of 0.5 mum. When the power performance was evaluated at 1.9 GHz, the E-PHEMT shows a saturation output power of 34.1 dBm (2.57 W) with power-added efficiency (PAE) of 64.5 % and power gain of 10.2 dB at 3 V bias. The linear gain under this testing condition is 14.9 dB. The E-PHEMTs developed have excellent power performance and are suitable for power amplifier application for cellular handsets.