氮化銦鎵和氮砷化鎵三元化合物薄膜製備及光電物理性質研究
| dc.contributor.author | 陳衛國 | en_US |
| dc.contributor.author | WEI-KUOCHEN | en_US |
| dc.contributor.department | 交通大學電子物理系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:46:05Z | |
| dc.date.available | 2014-12-13T10:46:05Z | |
| dc.date.issued | 2000 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC89-2112-M009-012 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=523763&docId=95131 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/100638 | |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 同價位元素雜質摻雜 | zh_TW |
| dc.subject | 氮砷化鎵 | zh_TW |
| dc.subject | 磊晶熱力學 | zh_TW |
| dc.subject | 有機金屬氣相磊晶 | zh_TW |
| dc.subject | 異質界面結構 | zh_TW |
| dc.subject | Isoelectronic doping | en_US |
| dc.subject | GaAsN | en_US |
| dc.subject | Thermodynamics growth model | en_US |
| dc.title | 氮化銦鎵和氮砷化鎵三元化合物薄膜製備及光電物理性質研究 | zh_TW |
| dc.title | Epitaxy and Characterization of InGaN and GaAsN Alloys | en_US |
| dc.type | Plan | en_US |