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Spin-on ZnO thin film transistors with oxidation treatment

dc.citation.epage559en_US
dc.citation.spage557en_US
dc.contributor.authorHuang, Chen-Shuoen_US
dc.contributor.authorChou, Yi-Tehen_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorChung, Wan-Fangen_US
dc.contributor.authorHuang, Chien-Juien_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:12:09Z
dc.date.available2014-12-08T15:12:09Z
dc.date.issued2007en_US
dc.description.abstractThe ZnO TFTs was fabricated by spin-on method and investigated by modulating deposition environments. It was discovered that the conductivity of ZnO TFTs can be obviously changed by modulating curing temperature and the performances can be improved by incorporating oxygen.en_US
dc.identifier.isbn978-957-28522-4-8en_US
dc.identifier.journalIDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/9312
dc.identifier.wosnumberWOS:000258177700145
dc.language.isoen_USen_US
dc.titleSpin-on ZnO thin film transistors with oxidation treatmenten_US
dc.typeProceedings Paperen_US

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