Method for growing non-polar m-plane epitaxial layer of wurtzite semiconductors on single crystal oxide substrates
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20110062437 | zh_TW |
| dc.contributor.author | Chang, Li | en_US |
| dc.contributor.author | Ho, Yen-Teng | en_US |
| dc.date.accessioned | 2014-12-16T06:15:26Z | |
| dc.date.available | 2014-12-16T06:15:26Z | |
| dc.date.issued | 2011-03-17 | en_US |
| dc.description.abstract | The present invention relates to a method for growing a non-polar m-plane epitaxial layer on a single crystal oxide substrate, which comprises the following steps: providing a single crystal oxide with a perovskite structure; using a plane of the single crystal oxide as a substrate; and forming an m-plane epitaxial layer of wurtzite semiconductors on the plane of the single crystal oxide by a vapor deposition process. The present invention also provides an epitaxial layer having an m-plane obtained according to the aforementioned method. | zh_TW |
| dc.identifier.govdoc | H01L029/22 | zh_TW |
| dc.identifier.govdoc | H01L021/34 | zh_TW |
| dc.identifier.govdoc | H01L021/20 | zh_TW |
| dc.identifier.govdoc | H01L029/20 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/105323 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | Method for growing non-polar m-plane epitaxial layer of wurtzite semiconductors on single crystal oxide substrates | zh_TW |
| dc.type | Patents | en_US |