在矽基板整合40奈米三五族與鍺量子井場效電晶體作為低功率與高速無線之應用(II)
| dc.contributor.author | 張翼 | en_US |
| dc.contributor.author | CHANG EDWARD YI | en_US |
| dc.contributor.department | 國立交通大學材料科學與工程學系（所） | zh_TW |
| dc.date.accessioned | 2014-12-13T10:45:03Z | |
| dc.date.available | 2014-12-13T10:45:03Z | |
| dc.date.issued | 2010 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC99-2120-M009-005 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=2149157&docId=346002 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/100259 | |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 量子井場效電晶體 | zh_TW |
| dc.subject | 砷化銦 | zh_TW |
| dc.subject | 超低功率 | zh_TW |
| dc.subject | 數位邏輯 | zh_TW |
| dc.subject | 原子層氣相沉積 | zh_TW |
| dc.subject | 表面處理 | zh_TW |
| dc.title | 在矽基板整合40奈米三五族與鍺量子井場效電晶體作為低功率與高速無線之應用(II) | zh_TW |
| dc.title | Integration of 40 nm III-V and Ge Quantum Well FETs on Si Substrate for Low-Power and High Speed Wireless Applications (II) | en_US |
| dc.type | Plan | en_US |