A New Procedure to Extract Ultra-Low Specific Contact Resistivity
| dc.contributor.author | Tseng, Hsuan-Tzu | en_US |
| dc.contributor.author | Tsui, Bing-Yue | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:28:41Z | |
| dc.date.available | 2014-12-08T15:28:41Z | |
| dc.date.issued | 2012 | en_US |
| dc.description.abstract | In this work, a new procedure to extract ultra-low specific contact resistivity down to 10(-9) Omega-cm(2) is proposed. Design guidelines of the test structure are analyzed with 3-D simulation. Compared to the typical Cross-bridge-Kelvin resistor structure, the proposed structure has much better accuracy at low resistivity regime, looser design rules, simpler fabrication process. | en_US |
| dc.identifier.isbn | 978-1-4673-1137-3 | en_US |
| dc.identifier.journal | 2012 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE (IITC) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/20753 | |
| dc.identifier.wosnumber | WOS:000312547500022 | |
| dc.language.iso | en_US | en_US |
| dc.title | A New Procedure to Extract Ultra-Low Specific Contact Resistivity | en_US |
| dc.type | Proceedings Paper | en_US |
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