A comparative study of SILC transient characteristics and mechanisms in FN stressed and hot hole stressed tunnel oxides
| dc.citation.epage | 409 | en_US |
| dc.citation.spage | 405 | en_US |
| dc.contributor.author | Zous, NK | en_US |
| dc.contributor.author | Wang, TH | en_US |
| dc.contributor.author | Yeh, CC | en_US |
| dc.contributor.author | Tsai, CW | en_US |
| dc.contributor.author | Huang, CM | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:27:09Z | |
| dc.date.available | 2014-12-08T15:27:09Z | |
| dc.date.issued | 1999 | en_US |
| dc.description.abstract | The mechanisms and transient characteristics of hot hole stress and FN stress induced excess leakage currents in tunnel oxides are investigated. Hot hole SILC is found to have a more pronounced transient effect. The transient is attributed to positive oxide charge detrapping and thus annihilation of positive charge-assisted tunneling current. The positive charge assisted tunneling current can be annealed by substrate hot electron injection. The DC and transient components in FN SILC are also discussed. | en_US |
| dc.identifier.doi | 10.1109/RELPHY.1999.761647 | en_US |
| dc.identifier.isbn | 0-7803-5220-3 | en_US |
| dc.identifier.journal | 1999 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 37TH ANNUAL | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/RELPHY.1999.761647 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/19395 | |
| dc.identifier.wosnumber | WOS:000079933100064 | |
| dc.language.iso | en_US | en_US |
| dc.title | A comparative study of SILC transient characteristics and mechanisms in FN stressed and hot hole stressed tunnel oxides | en_US |
| dc.type | Proceedings Paper | en_US |