High-peak-power diode-pumped actively Q-switched Nd : YAG intracavity Raman laser with an undoped YVO4 crystal - art. no. 68712J
| dc.citation.epage | J8712 | en_US |
| dc.citation.spage | J8712 | en_US |
| dc.citation.volume | 6871 | en_US |
| dc.contributor.author | Su, K. W. | en_US |
| dc.contributor.author | Chang, Y. T. | en_US |
| dc.contributor.author | Chen, Y. F. | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:45:05Z | |
| dc.date.available | 2014-12-08T15:45:05Z | |
| dc.date.issued | 2008 | en_US |
| dc.description.abstract | The efficient stimulated Raman scattering conversion in a diode-pumped actively Q-switched Nd:YAG laser was achieved with an undoped YVO4 crystal as a Raman shifter. With an incident pump power of 16.2 W, 1176-nm first Stokes average output power of 2.97 W was generated at a pulse repetition rate of 50 kHz. The maximum pulse energy is higher than 83 mu J at both 20 kHz and 30 kHz. With mode-locked modulation, the effective pulse width far above threshold is usually below 5 ns. With an incident pump power of 7.62 W, the peak-power of 43.5 kW was demonstrated at 20 kHz. | en_US |
| dc.identifier.doi | 10.1117/12.762821 | en_US |
| dc.identifier.isbn | 978-0-8194-7046-1 | en_US |
| dc.identifier.issn | 0277-786X | en_US |
| dc.identifier.journal | SOLID STATE LASERS XVII: TECHNOLOGY AND DEVICES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1117/12.762821 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/30409 | |
| dc.identifier.wosnumber | WOS:000255549800074 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Raman laser | en_US |
| dc.subject | diode-pumped laser | en_US |
| dc.subject | actively Q-switched | en_US |
| dc.title | High-peak-power diode-pumped actively Q-switched Nd : YAG intracavity Raman laser with an undoped YVO4 crystal - art. no. 68712J | en_US |
| dc.type | Article | en_US |