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56 Gbit/s DMT Signal Generated by an Integrated Silicon Ring Modulator

dc.citation.woscount0en_US
dc.contributor.authorXu, Keen_US
dc.contributor.authorWong, Chi Yanen_US
dc.contributor.authorZhang, Liangen_US
dc.contributor.authorLiu, Leien_US
dc.contributor.authorLiu, Gordon Ningen_US
dc.contributor.authorChow, Chi Waien_US
dc.contributor.authorTsang, Hon Kien_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2017-04-21T06:48:57Z
dc.date.available2017-04-21T06:48:57Z
dc.date.issued2016en_US
dc.description.abstractWe demonstrate a 56 Gb/s DMT signal using a compact silicon microring modulator. The measured bit error rate of back to back modulated signal is well below the FEC limit.en_US
dc.identifier.isbn978-1-9435-8011-8en_US
dc.identifier.issn2160-9020en_US
dc.identifier.journal2016 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/134630
dc.identifier.wosnumberWOS:000391286403244en_US
dc.language.isoen_USen_US
dc.title56 Gbit/s DMT Signal Generated by an Integrated Silicon Ring Modulatoren_US
dc.typeProceedings Paperen_US

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