具應變之0.808UM高功效半導體雷射

dc.contributor.author	黃凱風	en_US
dc.contributor.author	HUANG KAI-FENG	en_US
dc.contributor.department	交通大學電子物理系	zh_TW
dc.date.accessioned	2014-12-13T10:38:07Z
dc.date.available	2014-12-13T10:38:07Z
dc.date.issued	1998	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.identifier.govdoc	NSC87-2215-E009-018	zh_TW
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=396179&docId=69979	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/95066
dc.language.iso	zh_TW	en_US
dc.subject	半導體雷射	zh_TW
dc.subject	量子井	zh_TW
dc.subject	分子束磊晶生長	zh_TW
dc.subject	雷射二極體	zh_TW
dc.subject	Semiconductor laser	en_US
dc.subject	Quantum well	en_US
dc.subject	MBE growth	en_US
dc.subject	Laser diode	en_US
dc.title	具應變之0.808UM高功效半導體雷射	zh_TW
dc.title	0.808.mu.m High Power Strained Quantum Well Diode Laser	en_US
dc.type	Plan	en_US

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