Inductorless broadband RF front-end using 2 um GaInP/GaAs HBT technology
| dc.citation.epage | 2131 | en_US |
| dc.citation.spage | 2128 | en_US |
| dc.contributor.author | Wu, Tzung-Han | en_US |
| dc.contributor.author | Meng, Chinchun | en_US |
| dc.contributor.author | Huang, Guo-Wei | en_US |
| dc.contributor.department | 電信工程研究所 | zh_TW |
| dc.contributor.department | Institute of Communications Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:15:31Z | |
| dc.date.available | 2014-12-08T15:15:31Z | |
| dc.date.issued | 2007 | en_US |
| dc.description.abstract | A GaInP/GaAs HBT broadband RF front-end consisting of a low noise wideband amplifier and a micromixer is demonstrated in this paper. The major advantage of this work is the elimination of inductors and thus the chip area can be greatly saved. The bandwidth of the RF front-end is up to 7 GHz. The measured conversion gain is higher than 25 dB from 1 GHz to 7 GHz and the noise figure of the RF front-end is less than 8 dB within the bandwidth. | en_US |
| dc.identifier.isbn | 978-1-4244-0687-6 | en_US |
| dc.identifier.issn | 0149-645X | en_US |
| dc.identifier.journal | 2007 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-6 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/11612 | |
| dc.identifier.wosnumber | WOS:000250827405067 | |
| dc.language.iso | en_US | en_US |
| dc.subject | GaInP/GaAs HBT | en_US |
| dc.subject | wideband amplifier | en_US |
| dc.subject | micromixer | en_US |
| dc.subject | Gilbert mixer | en_US |
| dc.title | Inductorless broadband RF front-end using 2 um GaInP/GaAs HBT technology | en_US |
| dc.type | Proceedings Paper | en_US |
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