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New insights on RF CMOS stability related to bias, scaling, and temperature

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dc.citation.epage43en_US
dc.citation.spage40en_US
dc.contributor.authorSu, JGen_US
dc.contributor.authorWong, SCen_US
dc.contributor.authorChang, CYen_US
dc.contributor.authorChiu, KYen_US
dc.contributor.authorHuang, TYen_US
dc.contributor.authorOu, CTen_US
dc.contributor.authorKao, CHen_US
dc.contributor.authorChao, CJen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:27:07Z
dc.date.available2014-12-08T15:27:07Z
dc.date.issued2000en_US
dc.description.abstractThe stability issues of CMOS devices for RF applications were studied. The stability factor of MOS devices based on the small-signal model (SSM) parameters was derived, for the first time. The results reveal some new insights on the effects of biasing, and scaling parameters on the stability; and were subsequently confirmed by our experimental results. Our results also show that unconditional stability of RF CMOS devices can be obtained with proper biasing and device geometries. Finally, the effects of temperature on stability were also: investigated. Our results suggest that careful attention needs to be paid for stable low temperature operation.en_US
dc.identifier.isbn0-7803-6304-3en_US
dc.identifier.journal2000 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGSen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/19347
dc.identifier.wosnumberWOS:000166961800010
dc.language.isoen_USen_US
dc.titleNew insights on RF CMOS stability related to bias, scaling, and temperatureen_US
dc.typeProceedings Paperen_US

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