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Long Photon Lifetime from Microdisk Cavity Laser with Type II GaSb/GaAs Quantum Dots

dc.citation.woscount0en_US
dc.contributor.authorHsu, K. S.en_US
dc.contributor.authorChang, C. C.en_US
dc.contributor.authorLin, W. H.en_US
dc.contributor.authorShih, M. H.en_US
dc.contributor.authorLin, S. Y.en_US
dc.contributor.authorChang, Y. C.en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2015-12-02T03:00:51Z
dc.date.available2015-12-02T03:00:51Z
dc.date.issued2013-01-01en_US
dc.description.abstractMicrodisk lasers with active region made of type II GaSb/GaAs quantum dots on the GaAs substrate have been demonstrated. Lasing wavelengths near 1 mu m was achieved and longer photon lifetime from type II structure also observed. (C) 2013 Optical Society of Americaen_US
dc.identifier.isbn978-1-55752-973-2en_US
dc.identifier.issn2160-9020en_US
dc.identifier.journal2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/128498
dc.identifier.wosnumberWOS:000355262504025en_US
dc.language.isoen_USen_US
dc.titleLong Photon Lifetime from Microdisk Cavity Laser with Type II GaSb/GaAs Quantum Dotsen_US
dc.typeProceedings Paperen_US

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