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2.4 V-operated enhancement-mode power PHEMTs for personal handy-phone system application

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dc.citation.epage129en_US
dc.citation.spage127en_US
dc.contributor.authorChen, SHen_US
dc.contributor.authorChang, EYen_US
dc.contributor.authorLin, YCen_US
dc.contributor.authorLee, CSen_US
dc.contributor.department友訊交大聯合研發中心zh_TW
dc.contributor.departmentD Link NCTU Joint Res Ctren_US
dc.date.accessioned2014-12-08T15:26:51Z
dc.date.available2014-12-08T15:26:51Z
dc.date.issued2001en_US
dc.description.abstractEnhacement-mode pseudomorphic high electron mobility transistors (E-PHEMTs) were developed for low voltage wireless communication applications. Under drain bias of 3.6 V, the device delivered a high output power density of 265.25 mW/mm (29.5dBm) with a power-added-efficiency (PAE) of 50.54 %. Under 1.9GHz pi/4-shifted quadrature phase shift keying(QPSK) modulation signal, the 3.36 mm devices meet personal handy-phone system (PHS) specification at an output power level of 22.42 dB with PAE of 35.12% under 2.4 V drain bias. The E-PHEMTs developed are adequate for low-voltage-operated PHS application.en_US
dc.identifier.isbn0-7803-7065-1en_US
dc.identifier.journalIMOC 2001: PROCEEDINGS OF THE 2001 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE: THE CHALLENGE OF THE NEW MILLENIUM: TECHNOLOGICAL DEVELOPMENT WITH ENVIRONMENTAL CONSCIOUSNESSen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/19097
dc.identifier.wosnumberWOS:000177851000028
dc.language.isoen_USen_US
dc.subjectenhancement-modeen_US
dc.subjectPHEMTen_US
dc.subjectlow voltageen_US
dc.subjectPHSen_US
dc.title2.4 V-operated enhancement-mode power PHEMTs for personal handy-phone system applicationen_US
dc.typeProceedings Paperen_US

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