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Efficiency and droop improvement in InGaN/GaN light-emitting diodes by selectively carrier-distribution manipulation

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dc.contributor.authorLin, Da-Weien_US
dc.contributor.authorWang, Chao-Hsunen_US
dc.contributor.authorChang, Shih-Pangen_US
dc.contributor.authorKu, Pu-Hsihen_US
dc.contributor.authorLan, Yu-Pinen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:29:21Z
dc.date.available2014-12-08T15:29:21Z
dc.date.issued2012en_US
dc.description.abstractEfficiency and droop behavior in InGaN/GaN light-emitting diodes are both improved by selectively-graded-composition multi-quantum barriers (SGQB). Simulation results show that SGQB could moderately improve the hole transport in active region. In the meantime, spatial distribution overlap between electrons and holes in active region could be also well-considered. Therefore, the radiative recombination of SGQB LED is more efficient than that of conventional LED. The overall efficiency and droop behavior are simultaneously improved in SGQB LED, at both low and high current density.en_US
dc.identifier.isbn978-1-55752-933-6en_US
dc.identifier.journal2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/21137
dc.identifier.wosnumberWOS:000310362402004
dc.language.isoen_USen_US
dc.titleEfficiency and droop improvement in InGaN/GaN light-emitting diodes by selectively carrier-distribution manipulationen_US
dc.typeProceedings Paperen_US

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