Improved Electrical Performance and Reliability of Poly-Si TFTs Fabricated by Drive-In Nickel-Induced Crystallization with Chemical Oxide Layer
| dc.citation.epage | 1475 | en_US |
| dc.citation.issue | 6 | en_US |
| dc.citation.spage | 1470 | en_US |
| dc.citation.volume | 40 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Lai, Ming-Hui | en_US |
| dc.contributor.author | Wu, Yewchung Sermon | en_US |
| dc.contributor.author | Chang, Chih-Pang | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:11:29Z | |
| dc.date.available | 2014-12-08T15:11:29Z | |
| dc.date.issued | 2011-06-01 | en_US |
| dc.description.abstract | Ni-metal-induced crystallization (MIC) of amorphous Si (alpha-Si) has been employed to fabricate low-temperature polycrystalline silicon thin-film transistors (TFTs). However, the Ni residues degrade the device performance. In this study, a new method for manufacturing MIC-TFTs using drive-in Ni-induced crystallization with a chemical oxide layer (DICC) is proposed. Compared with that of MIC-TFTs, the on/off current ratio (I (on)/I (off)) of DICC-TFTs was increased by a factor of 9.7 from 9.21 x 10(4) to 8.94 x 10(5). The leakage current (I (off)) of DICC-TFTs was 4.06 pA/mu m, which was much lower than that of the MIC-TFTs (19.20 pA/mu m). DICC-TFTs also possess high immunity against hot-carrier stress and thereby exhibit good reliability. | en_US |
| dc.identifier.doi | 10.1007/s11664-011-1522-3 | en_US |
| dc.identifier.issn | 0361-5235 | en_US |
| dc.identifier.journal | JOURNAL OF ELECTRONIC MATERIALS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1007/s11664-011-1522-3 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/8808 | |
| dc.identifier.wosnumber | WOS:000290201500019 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Drive-in nickel-induced crystallization | en_US |
| dc.subject | chemical oxide | en_US |
| dc.subject | fluorine ion implantation | en_US |
| dc.subject | metal-induced crystallization | en_US |
| dc.subject | thin-film transistors (TFTs) | en_US |
| dc.title | Improved Electrical Performance and Reliability of Poly-Si TFTs Fabricated by Drive-In Nickel-Induced Crystallization with Chemical Oxide Layer | en_US |
| dc.type | Article | en_US |