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A ZnO/InN/GaN Heterojunction Photodetector with Extended Infrared Response

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dc.citation.woscount0en_US
dc.contributor.authorHsu, Lung-Hsingen_US
dc.contributor.authorHsu, Shun-Chiehen_US
dc.contributor.authorLee, Hsin-Yingen_US
dc.contributor.authorTsai, Yu-Linen_US
dc.contributor.authorLin, Da-Weien_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorHwang, Yi-Chiaen_US
dc.contributor.authorChen, Yin-Hanen_US
dc.contributor.authorHe, Jr-Hauen_US
dc.contributor.authorCheng, Yuh-Jenen_US
dc.contributor.authorLin, Shih-Yenen_US
dc.contributor.authorLin, Chien-Chungen_US
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2017-04-21T06:49:14Z
dc.date.available2017-04-21T06:49:14Z
dc.date.issued2015en_US
dc.description.abstractAn extended infrared photoresponse is observed in a ZnO/InN/GaN heterojunction diode with InN grown by MOCVD. The external quantum efficiency is measured between 1200 and 1800 nm and can be as high as 3.55%.en_US
dc.identifier.isbn978-1-55752-968-8en_US
dc.identifier.issn2160-9020en_US
dc.identifier.journal2015 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/134290
dc.identifier.wosnumberWOS:000370627101349en_US
dc.language.isoen_USen_US
dc.titleA ZnO/InN/GaN Heterojunction Photodetector with Extended Infrared Responseen_US
dc.typeProceedings Paperen_US

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