Investigation of emission polarization and strain in InGaN/GaN multiple quantum wells on nanorod epitaxially lateral overgrowth templates
| dc.citation.volume | 8262 | en_US |
| dc.contributor.author | Huang, Huei-Min | en_US |
| dc.contributor.author | Lu, Tien-Chang | en_US |
| dc.contributor.author | Chang, Chiao-Yun | en_US |
| dc.contributor.author | Lan, Yu-Pin | en_US |
| dc.contributor.author | Ling, Shih-Chun | en_US |
| dc.contributor.author | Chan, Wei-Wen | en_US |
| dc.contributor.author | Kuo, Hao-Chung | en_US |
| dc.contributor.author | Wang, Shing-Chung | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:22:28Z | |
| dc.date.available | 2014-12-08T15:22:28Z | |
| dc.date.issued | 2012 | en_US |
| dc.description.abstract | Non-polar (a-plane) InGaN/GaN multiple quantum wells (MQWs) on the GaN nanorod epitaxially lateral overgrowth templates with different nanorod height have been fabricated. The average in-plane strain in the InGaN MQWs has been determined from 2.73x10(-2) to 2.58x10(-2) while the nanorod height in templates increases from 0 to 1.7 mu m. The polarization ratio of the emission from InGaN MQWs varies from 85 % to 53 % along with the increase of the GaN nanorod height. The reduction of polarization ratio has been attributed to the partial strain relaxation within the epitaxial structures as a result of growth on the GaN nanorod templates and the micro-size air-voids observed in the nanorod templates. | en_US |
| dc.identifier.doi | 82621Y | en_US |
| dc.identifier.isbn | 978-0-8194-8905-0 | en_US |
| dc.identifier.issn | 0277-786X | en_US |
| dc.identifier.journal | GALLIUM NITRIDE MATERIALS AND DEVICES VII | en_US |
| dc.identifier.uri | http://dx.doi.org/82621Y | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/15892 | |
| dc.identifier.wosnumber | WOS:000302556100039 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Non-polar | en_US |
| dc.subject | InGaN/GaN MQWs | en_US |
| dc.subject | optical polarization | en_US |
| dc.subject | strain | en_US |
| dc.title | Investigation of emission polarization and strain in InGaN/GaN multiple quantum wells on nanorod epitaxially lateral overgrowth templates | en_US |
| dc.type | Proceedings Paper | en_US |