INSTABILITY MECHANISMS FOR THE HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS WITH NEGATIVE AND POSITIVE BIAS STRESSES ON THE GATE ELECTRODES

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dc.citation.epage78en_US
dc.citation.issue1en_US
dc.citation.spage76en_US
dc.citation.volume67en_US
dc.citation.woscount27
dc.contributor.authorTAI, YHen_US
dc.contributor.authorTSAI, JWen_US
dc.contributor.authorCHENG, HCen_US
dc.contributor.authorSU, FCen_US
dc.contributor.department奈米中心zh_TW
dc.contributor.departmentNano Facility Centeren_US
dc.date.accessioned2014-12-08T15:03:15Z
dc.date.available2014-12-08T15:03:15Z
dc.date.issued1995-07-03en_US
dc.identifier.doi10.1063/1.115512en_US
dc.identifier.issn0003-6951en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.115512en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/1813
dc.identifier.wosnumberWOS:A1995RF82900026
dc.language.isoen_USen_US
dc.titleINSTABILITY MECHANISMS FOR THE HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS WITH NEGATIVE AND POSITIVE BIAS STRESSES ON THE GATE ELECTRODESen_US
dc.typeArticleen_US

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