THREE-DIMENSIONAL COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICE
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20120228713 | zh_TW |
| dc.contributor.author | Chen Kuan-Neng | en_US |
| dc.contributor.author | Chang Yao-Jen | en_US |
| dc.date.accessioned | 2014-12-16T06:15:06Z | |
| dc.date.available | 2014-12-16T06:15:06Z | |
| dc.date.issued | 2012-09-13 | en_US |
| dc.description.abstract | A three-dimensional complementary metal oxide semiconductor device comprises a bottom wafer having a first-type strained MOS transistor; a top wafer stacked on the bottom wafer face to face or face to back, having a second-type strained MOS transistor arranged opposite to the first-type strained MOS transistor, and having a plurality of metal pads and a plurality of TSVs connected to the metal pads; and a hybrid bonding layer arranged between the bottom wafer and the top wafer, having metallic-bonding areas connecting the first-type and second-type MOS transistors to TSVs and a non-metallic bonding area filled in all space except the metallic bonding areas, so as to bond the bottom and top wafers. | zh_TW |
| dc.identifier.govdoc | H01L027/092 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/105136 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | THREE-DIMENSIONAL COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICE | zh_TW |
| dc.type | Patents | en_US |