不同型摻雜材料浮動閘極快閃式記憶元件可靠性問題之研究
| dc.contributor.author | 莊紹勳 | en_US |
| dc.contributor.author | Chung Steve S | en_US |
| dc.contributor.department | 國立交通大學電子工程學系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:35:13Z | |
| dc.date.available | 2014-12-13T10:35:13Z | |
| dc.date.issued | 2000 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC89-2218-E009-110 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=619835&docId=115468 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/93274 | |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 快閃式記憶體 | zh_TW |
| dc.subject | 可靠度 | zh_TW |
| dc.subject | 浮動閘 | zh_TW |
| dc.subject | 資料持久力 | zh_TW |
| dc.subject | 氧化層傷害 | zh_TW |
| dc.subject | Frash memory | en_US |
| dc.subject | Reliability | en_US |
| dc.subject | Floating gate | en_US |
| dc.subject | Data retention | en_US |
| dc.subject | Oxide damage | en_US |
| dc.title | 不同型摻雜材料浮動閘極快閃式記憶元件可靠性問題之研究 | zh_TW |
| dc.title | A Study on the Reliability Issues of Flash EEPROM with Different Floating Gate Materials | en_US |
| dc.type | Plan | en_US |