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Comparison of characteristics and integration of copper diffusion-barrier dielectrics

dc.citation.epage42en_US
dc.citation.issue1-2en_US
dc.citation.spage36en_US
dc.citation.volume498en_US
dc.contributor.authorWang, TCen_US
dc.contributor.authorCheng, YLen_US
dc.contributor.authorWang, YLen_US
dc.contributor.authorHsieh, TEen_US
dc.contributor.authorHwang, GJen_US
dc.contributor.authorChen, CFen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.date.accessioned2014-12-08T15:17:12Z
dc.date.available2014-12-08T15:17:12Z
dc.date.issued2006-03-01en_US
dc.description.abstractThe characteristics of various copper (Cu) barrier layers, including SiN, SiCN, and SiCO, were investigated in this work. Carbon-based barrier films (SiCN and SiCO) improved the dielectric constant and line-to-line capacitance, but led to sacrifice in film deposition rate, diffusion-barrier performance, and adhesion strength to Cu in comparison with SiN films. In addition, SiN and SiCO films showed the superior electromigration (EM) performance and stress-induced void migration (SM) performance, respectively. Furthermore, the reliability results of SM and EM are strongly related to the barrier film stress characteristics and the adhesion strength between Cu layers. Therefore, optimization of the barrier layer stress and the enhancement of the interfacial condition between Cu and barrier films are crucial to significantly improve reliability. (c) 2005 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.tsf.2005.07.059en_US
dc.identifier.issn0040-6090en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2005.07.059en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/12543
dc.identifier.wosnumberWOS:000235270500008
dc.language.isoen_USen_US
dc.subjectbarrier layeren_US
dc.subjectlow dielectric constanten_US
dc.subjectadhesion strengthen_US
dc.subjectcapacitanceen_US
dc.titleComparison of characteristics and integration of copper diffusion-barrier dielectricsen_US
dc.typeArticle; Proceedings Paperen_US

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