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High performance metal-gate/high-kappa, MOSFETs and GaAs compatible RF passive devices on Ge-on-Insulator tlechnology

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dc.citation.epage305en_US
dc.citation.spage302en_US
dc.contributor.authorChin, Aen_US
dc.contributor.authorKao, HLen_US
dc.contributor.authorYu, DSen_US
dc.contributor.authorLiao, CCen_US
dc.contributor.authorZhu, Cen_US
dc.contributor.authorLi, MFen_US
dc.contributor.authorZhu, SYen_US
dc.contributor.authorKwong, DLen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:25:55Z
dc.date.available2014-12-08T15:25:55Z
dc.date.issued2004en_US
dc.description.abstractWe propose and demonstrate a new VLSI structure using high performance metal-gate/high-kappa MOSFETs and high-Q RF passive devices on Ge-on- Insulator (GOI) platform. In additional to high RF performance passive devices on insulating Si formed by ion implantation. the metal-gate/(La)AiO(3)/GOI MOSFETs have 1.7-2.0X improved electron and hole mobility with the merits of minimizing interfacial reaction., high-kappa crystallization, Fermi-level pinning, and impurity diffusion due to low thermal budget of 500 degrees C RTA.en_US
dc.identifier.isbn0-7803-8511-Xen_US
dc.identifier.journal2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGSen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/18361
dc.identifier.wosnumberWOS:000227342200070
dc.language.isoen_USen_US
dc.titleHigh performance metal-gate/high-kappa, MOSFETs and GaAs compatible RF passive devices on Ge-on-Insulator tlechnologyen_US
dc.typeProceedings Paperen_US

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