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Light emitting semiconductor device

dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber08563964zh_TW
dc.contributor.authorWang Chao-Hsunen_US
dc.contributor.authorLi Zhen-Yuen_US
dc.contributor.authorKuo Hao-Chungen_US
dc.date.accessioned2014-12-16T06:13:58Z
dc.date.available2014-12-16T06:13:58Z
dc.date.issued2013-10-22en_US
dc.description.abstractA semiconductor light emitting device is disclosed, which comprises: a substrate having a first surface and a second surface; a first semiconductor conductive layer is disposed on the first surface of the substrate; an insert layer is disposed on the first semiconductor conductive layer; an active layer is disposed on the insert layer; a second semiconductor conductive layer is disposed on the active layer; a first electrode is disposed on the second semiconductor conductive layer; and a second electrode is disposed on the second surface of the substrate, in which the electric of the second electrode is opposite to that of the first electrode.zh_TW
dc.identifier.govdocH01L029/06zh_TW
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/104432
dc.language.isozh_TWen_US
dc.titleLight emitting semiconductor devicezh_TW
dc.typePatentsen_US

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