電阻式記憶體陣列內新式可靠性效應與物理機制、統計分析量測及三度空間可靠性模擬

dc.contributor.author	汪大暉	zh_TW
dc.contributor.author	WANG TAHUI	en_US
dc.contributor.department	國立交通大學電子工程學系及電子研究所	zh_TW
dc.date.accessioned	2016-03-29T00:01:16Z
dc.date.available	2016-03-29T00:01:16Z
dc.date.issued	2016	en_US
dc.description.sponsorship	科技部	zh_TW
dc.identifier.govdoc	MOST104-2221-E009-053-MY3	zh_TW
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=11726875&docId=480868	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/131000
dc.language.iso	zh_TW	en_US
dc.title	電阻式記憶體陣列內新式可靠性效應與物理機制、統計分析量測及三度空間可靠性模擬	zh_TW
dc.title	New Failure Modes, Statistical Characterization and 3D Reliability Physics Simulation in RRAM Array	en_US
dc.type	Plan	en_US

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