無線通訊用2.4V伏特砷化鎵高電子遷移率功率電晶體(Power HEMT)研發計畫
| dc.contributor.author | 張翼 | en_US |
| dc.contributor.department | 交通大學材料科學與工程系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:50:08Z | |
| dc.date.available | 2014-12-13T10:50:08Z | |
| dc.date.issued | 2000 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC89-2213-E009-047 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=525766&docId=95661 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/101992 | |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 砷化鎵 | zh_TW |
| dc.subject | 功率電晶體 | zh_TW |
| dc.subject | 高電子遷移率功率電晶體 | zh_TW |
| dc.subject | 無線通訊 | zh_TW |
| dc.subject | GaAs | en_US |
| dc.subject | Power transistor | en_US |
| dc.subject | Power HEMT | en_US |
| dc.subject | Wireless communication | en_US |
| dc.title | 無線通訊用2.4V伏特砷化鎵高電子遷移率功率電晶體(Power HEMT)研發計畫 | zh_TW |
| dc.title | The Development of 2.4V GaAs Power HEMT for Wireless Commumication Application | en_US |
| dc.type | Plan | en_US |