A design of CMOS broadband amplifier with high-Q active inductor
| dc.citation.epage | 89 | en_US |
| dc.citation.spage | 86 | en_US |
| dc.contributor.author | Yang, JN | en_US |
| dc.contributor.author | Cheng, YC | en_US |
| dc.contributor.author | Lee, CY | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:26:23Z | |
| dc.date.available | 2014-12-08T15:26:23Z | |
| dc.date.issued | 2003 | en_US |
| dc.description.abstract | A CMOS broadband amplifier with high-Q active inductor using 0.25um CMOS process is presented In this broadband amplifier, the compact high-Q active inductor is connected to the common-gate configuration to improve the performance of the high power gain, wide bandwidth, low power consumption and simple matching characteristics. Not using any passive inductor components is to be reduced the area of chip and the complexity. Advance Design System (ADS) simulator has been performed to verify the performance of the designed broadband amplifier It has been shown that the amplifier has a 20dB(S21) power gain in -3dB bandwidth, S11 of -17dB, S22 of -21 dB and noise figure (NF) of 8dB, under 2.5 V power supply with 18mW power consumption.* | en_US |
| dc.identifier.isbn | 0-7695-1944-X | en_US |
| dc.identifier.journal | 3RD IEEE INTERNATIONAL WORKSHOP ON SYSTEM-ON-CHIP FOR REAL-TIME APPLICATIONS, PROCEEDINGS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/18728 | |
| dc.identifier.wosnumber | WOS:000184335100017 | |
| dc.language.iso | en_US | en_US |
| dc.title | A design of CMOS broadband amplifier with high-Q active inductor | en_US |
| dc.type | Proceedings Paper | en_US |
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