Reducing Ni residues of Metal Induced Crystallization Poly-Si with a Simple Chemical Oxide Layer
| dc.citation.epage | 159 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 157 | en_US |
| dc.citation.volume | 33 | en_US |
| dc.contributor.author | Lai, Ming-Hui | en_US |
| dc.contributor.author | Wu, YewChung Sermon | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:29:42Z | |
| dc.date.available | 2014-12-08T15:29:42Z | |
| dc.date.issued | 2010 | en_US |
| dc.description.abstract | The high leakage current is the most important issue of MIC-TFT. Ni residues in the MIC-TFT is the major cause of the leakage. In this study, a chemical oxide layer was used to avoid excess of Ni atoms into a-Si layer during MIC process. The process is simple and without extra thermal annealing. It was found that the Ni concentration of poly-Si film with chemical oxide layer was much less than that of conventional MIC poly-Si film. As a result, the leakage current was improved. | en_US |
| dc.identifier.doi | 10.1149/1.3481230 | en_US |
| dc.identifier.isbn | 978-1-60768-174-8 | en_US |
| dc.identifier.issn | 1938-5862 | en_US |
| dc.identifier.journal | THIN FILM TRANSISTORS 10 (TFT 10) | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1149/1.3481230 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/21332 | |
| dc.identifier.wosnumber | WOS:000315444100017 | |
| dc.language.iso | en_US | en_US |
| dc.title | Reducing Ni residues of Metal Induced Crystallization Poly-Si with a Simple Chemical Oxide Layer | en_US |
| dc.type | Proceedings Paper | en_US |