Photoreflectance characterization of GaNAs/GaAs multiple quantum well structures
| dc.citation.epage | 1500 | en_US |
| dc.citation.spage | 1497 | en_US |
| dc.citation.volume | 389-3 | en_US |
| dc.contributor.author | Lu, CR | en_US |
| dc.contributor.author | Lee, JR | en_US |
| dc.contributor.author | Chen, YY | en_US |
| dc.contributor.author | Lee, WI | en_US |
| dc.contributor.author | Lee, SC | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:43:06Z | |
| dc.date.available | 2014-12-08T15:43:06Z | |
| dc.date.issued | 2002 | en_US |
| dc.description.abstract | We investigate GaNAs/GaAs multiple quantum well structures using the photoreflectance spectroscopy at various temperatures. The modulated optical response consists of quantum well excitonic transitions and band edge transitions that exhibits Franz-Keldysh oscillatory features. The bowing parameter, effective mass, and the band-offset value were adjusted to obtain the subband energies to best fit the observed quantum well transition energies. The period of the Franz-Keldysh oscillations indicates the strength of the internal field. | en_US |
| dc.identifier.isbn | 0-87849-894-X | en_US |
| dc.identifier.issn | 0255-5476 | en_US |
| dc.identifier.journal | SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/29158 | |
| dc.identifier.wosnumber | WOS:000177321100362 | |
| dc.language.iso | en_US | en_US |
| dc.subject | GaNAs/GaAs | en_US |
| dc.subject | photoreflectance | en_US |
| dc.subject | quantum wells | en_US |
| dc.title | Photoreflectance characterization of GaNAs/GaAs multiple quantum well structures | en_US |
| dc.type | Article; Proceedings Paper | en_US |
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