Investigation of Cat-CVD amorphous silicon film properties under high catalyzer temperature
| dc.citation.epage | 587 | en_US |
| dc.citation.issue | 3-4 | en_US |
| dc.citation.spage | 583 | en_US |
| dc.citation.volume | 7 | en_US |
| dc.contributor.author | Yen, K. H. | en_US |
| dc.contributor.author | Nishizaki, S. | en_US |
| dc.contributor.author | Ohdaira, K. | en_US |
| dc.contributor.author | Matsumura, H. | en_US |
| dc.contributor.author | Huang, Y. T. | en_US |
| dc.contributor.author | Zan, H. W. | en_US |
| dc.contributor.author | Tsai, C. C. | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:25:16Z | |
| dc.date.available | 2014-12-08T15:25:16Z | |
| dc.date.issued | 2010 | en_US |
| dc.description.abstract | In this study, we investigated the a-Si films which were deposited by Cat-CVD in the higher catalyzer temperature (T(cat)) regime. We studied the influence of high T(cat) on amorphous silicon (a-Si:H) thin-film properties. The information on a-Si-H bonding configuration was obtained by Fourier Transform Infrared Spectroscopy (FTIR). The film defect density was investigated by the electron spin resonance (ESR) as a function of T(cat), the distance between catalyzer and substrate (D(cs)), and the deposition pressure (P). (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | en_US |
| dc.identifier.doi | 10.1002/pssc.200982901 | en_US |
| dc.identifier.issn | 1610-1634 | en_US |
| dc.identifier.journal | PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4 | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1002/pssc.200982901 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/17636 | |
| dc.identifier.wosnumber | WOS:000287213400020 | |
| dc.language.iso | en_US | en_US |
| dc.title | Investigation of Cat-CVD amorphous silicon film properties under high catalyzer temperature | en_US |
| dc.type | Article | en_US |