Some Dielectric and Conduction Properties of the r.f. Reactively Sputtered Al2O3 Thin Film
| dc.citation.epage | 74 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 69 | en_US |
| dc.citation.volume | 5 | en_US |
| dc.contributor.author | 陳茂傑 | zh_TW |
| dc.contributor.author | M.C.Chen | en_US |
| dc.date.accessioned | 2017-10-06T06:18:02Z | |
| dc.date.available | 2017-10-06T06:18:02Z | |
| dc.date.issued | 1972-01 | en_US |
| dc.description.abstract | Dielectric films of Al2O3 were prepared by r.f. reactive sputtering. Investigation was then made on their dielectric dispersion and leakage characteristics. | en_US |
| dc.identifier.journal | 交大學刊 | zh_TW |
| dc.identifier.journal | SCIENCE BULLETIN NATIONAL CHIAO-TUNG UNIVERSITY | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/137478 | |
| dc.language.iso | en_US | en_US |
| dc.publisher | 交大學刊編輯委員會 | zh_TW |
| dc.title | Some Dielectric and Conduction Properties of the r.f. Reactively Sputtered Al2O3 Thin Film | en_US |
| dc.type | Campus Publications | en_US |