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Device Structural Effects, SPICE Modeling and Circuit Evaluation for Negative-Capacitance FETs

dc.citation.epage0en_US
dc.citation.spage0en_US
dc.citation.woscount0en_US
dc.contributor.authorSu, Pinen_US
dc.contributor.authorYou, Wei-Xiangen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2020-02-02T23:55:33Z
dc.date.available2020-02-02T23:55:33Z
dc.date.issued2019-01-01en_US
dc.identifier.isbn978-1-7281-0942-8en_US
dc.identifier.issn1930-8868en_US
dc.identifier.journal2019 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/153670
dc.identifier.wosnumberWOS:000503374900050en_US
dc.language.isoen_USen_US
dc.titleDevice Structural Effects, SPICE Modeling and Circuit Evaluation for Negative-Capacitance FETsen_US
dc.typeProceedings Paperen_US

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