磷化銦鎵 / 砷化鎵高崩潰電壓金屬-半導體場效電晶體之研製
| dc.contributor.author | 呂學士 | en_US |
| dc.contributor.author | SHEY-SHILU | en_US |
| dc.contributor.department | 國立台灣大學電機工程學系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:40:13Z | |
| dc.date.available | 2014-12-13T10:40:13Z | |
| dc.date.issued | 1994 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC83-0404-E002-015 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=109729&docId=17459 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/97294 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 磷化銦鎵 / 砷化鎵高崩潰電壓金屬-半導體場效電晶體之研製 | zh_TW |
| dc.title | The Study of GaInP/GaAs High Break Voltage MESFET | en_US |
| dc.type | Plan | en_US |
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