Effect of Depositing Tin Oxide Thin Film in Liquid Phase and Dip-Coating Cu and Au Catalysts on H(2)S Gas-Sensing Performance

dc.citation.epage	433	en_US
dc.citation.issue	8	en_US
dc.citation.spage	425	en_US
dc.citation.volume	20	en_US
dc.contributor.author	Chiou, Jin-Chern	en_US
dc.contributor.author	Tsai, Sheng-Wei	en_US
dc.contributor.author	Liu, Ya-Shu	en_US
dc.contributor.author	Huang, Chen-Tang	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.date.accessioned	2014-12-08T15:12:50Z
dc.date.available	2014-12-08T15:12:50Z
dc.date.issued	2008-01-01	en_US
dc.description.abstract	In this study, unlike conventional methods used to grow gas sensor films, a liquid-phase deposition method was used to deposit fluorine-doped tin oxide as the sensing material of a gas sensor. Furthermore, silica was doped into the film as an inhibitor to prevent the grain growth of tin oxide during the calcination process. This structure can be used to improve the sensitivity of a H,S sensor. By adding a moderate quantity of copper and gold catalysts on the surface of film, the sensitivity can be dramatically improved.	en_US
dc.identifier.issn	0914-4935	en_US
dc.identifier.journal	SENSORS AND MATERIALS	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/9880
dc.language.iso	en_US	en_US
dc.title	Effect of Depositing Tin Oxide Thin Film in Liquid Phase and Dip-Coating Cu and Au Catalysts on H(2)S Gas-Sensing Performance	en_US
dc.type	Article	en_US

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