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A 38mW 40Gb/s 4-Lane Tri-Band PAM-4 / 16-QAM Transceiver in 28nm CMOS for High-Speed Memory Interface

dc.citation.epageU250en_US
dc.citation.spage184en_US
dc.citation.volume59en_US
dc.citation.woscount0en_US
dc.contributor.authorCho, Wei-Hanen_US
dc.contributor.authorLi, Yileien_US
dc.contributor.authorDu, Yuanen_US
dc.contributor.authorWong, Chien-Hengen_US
dc.contributor.authorDu, Jieqiongen_US
dc.contributor.authorHuang, Po-Tsangen_US
dc.contributor.authorLee, Sheau Jiungen_US
dc.contributor.authorChen, Huan-Nengen_US
dc.contributor.authorJou, Chewn-Puen_US
dc.contributor.authorHsueh, Fu-Lungen_US
dc.contributor.authorChang, Mau-Chung Franken_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.date.accessioned2017-04-21T06:49:54Z
dc.date.available2017-04-21T06:49:54Z
dc.date.issued2016en_US
dc.identifier.isbn978-1-4673-9467-3en_US
dc.identifier.issn0193-6530en_US
dc.identifier.journal2016 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/136199
dc.identifier.wosnumberWOS:000382151400071en_US
dc.language.isoen_USen_US
dc.titleA 38mW 40Gb/s 4-Lane Tri-Band PAM-4 / 16-QAM Transceiver in 28nm CMOS for High-Speed Memory Interfaceen_US
dc.typeProceedings Paperen_US

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