Large-Signal Analysis of BARITT Diodes
| dc.citation.epage | 52 | en_US |
| dc.citation.issue | 1 | en_US |
| dc.citation.spage | 43 | en_US |
| dc.citation.volume | 6 | en_US |
| dc.contributor.author | 褚冀良 | zh_TW |
| dc.contributor.author | 施敏 | zh_TW |
| dc.contributor.author | J.L.Chu | en_US |
| dc.contributor.author | S.M.Sze | en_US |
| dc.date.accessioned | 2017-10-06T06:18:03Z | |
| dc.date.available | 2017-10-06T06:18:03Z | |
| dc.date.issued | 1973-02 | en_US |
| dc.description.abstract | Large-signal properties of p+νnp and associated BARITT (Barrier Injection Transit Time)diodes are analyzed. An accurate computer program(Sempak) is used which considers the space-charge balance, dependence of carrier mobilities on impurity concentration and electric field, and carrier generation and recombination. The static properties of BARITT diodes are also considered. General expressions for the flat-band voltage and the differential reactance are obtained. The results show that the p+νnp structure is the best choice which gives optimum performances both in static and microwave characteristics. | en_US |
| dc.identifier.journal | 交大學刊 | zh_TW |
| dc.identifier.journal | SCIENCE BULLETIN NATIONAL CHIAO-TUNG UNIVERSITY | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/137486 | |
| dc.language.iso | en_US | en_US |
| dc.publisher | 交大學刊編輯委員會 | zh_TW |
| dc.title | Large-Signal Analysis of BARITT Diodes | en_US |
| dc.type | Campus Publications | en_US |