Light emitter device
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 07977687 | zh_TW |
| dc.contributor.author | Chang Chun-Yen | en_US |
| dc.contributor.author | Yang Tsung Hsi | en_US |
| dc.date.accessioned | 2014-12-16T06:14:19Z | |
| dc.date.available | 2014-12-16T06:14:19Z | |
| dc.date.issued | 2011-07-12 | en_US |
| dc.description.abstract | A light emitting device (LED) structure formed on a Group IV-based semiconductor substrate is provided. The LED structure includes a Group IV-based substrate, an AlN nucleation layer formed on the Group IV-based substrate, a GaN epitaxial layer formed on the AlN nucleation layer, a distributed Bragg reflector (DBR) multi-layer structure formed on the epitaxial layer, and an LED active layer formed on the DBR multi-layer structure. | zh_TW |
| dc.identifier.govdoc | H01L029/26 | zh_TW |
| dc.identifier.govdoc | H01L031/12 | zh_TW |
| dc.identifier.govdoc | H01L033/00 | zh_TW |
| dc.identifier.govdoc | H01L029/18 | zh_TW |
| dc.identifier.govdoc | H01L027/15 | zh_TW |
| dc.identifier.govdoc | H01L029/267 | zh_TW |
| dc.identifier.govdoc | H01L021/00 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/104652 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | Light emitter device | zh_TW |
| dc.type | Patents | en_US |